Novel Thin Film Technology for Hybrid Optoelectronics Integration

While an increasingly larger amount of data are transported across optical fiber networks by light pulses, and optical computing may be a reality in the future, the efficient control of light for communication purposes and all-optical processing has become an extremely important target for photonics engineers. However, such effort necessarily requires the fabrication of several devices in low cost, ultra-compact photonics chips via the integration of different enabling materials.

A very fascinating technology consists in pairing III-V semiconductors or Silicon Insulator C-MOS substrates with suitable (and affordable) thin film technology, based for example on Magneto Sputtering Technology or Pulsed Laser Deposition (PLD) to be used for flexible Electro-Optical or Magneto Optical applications. In this talk, I will present some of our most recent results. For example, we have recently measured the electro-optical coefficient r33 of a novel ferroelectric compound (Calcium Barium Niobate) to be used in high speed integrated optics (thanks to its high Curie temperature). The quality of the electrode used to apply the exciting field was found to be a critical parameter, and following its optimization we estimated a lower bound for the r33 coefficient as large as 100 pm/V.